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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit) A KTC3072D/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) High Performance at Low Supply Voltage. C MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note1) ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 40 20 7 5 8 1.0 150 -55 150 UNIT V V V A W H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D 1. BASE 2. COLLECTOR 3. EMITTER DPAK Collector Power Dissipation Junction Temperature Storage Temperature Range A C I J Note 1: Pulse Width 100mS, Duty Cycle 30% Q K D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage (1) Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note 1 : hFE(1) Classification O:120 240, Y:200 ) TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCB=20V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=60mA(Pulse) VCE=6V, IC=50mA VCB=20V, f=1MHz, IE=0 GR:350 700 MIN. 40 20 7 120 100 20 - IPAK SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)(Note1) hFE(2) VCE(sat) fT Cob 400, TYP. 100 - MAX. 100 100 700 0.4 50 UNIT V V V nA nA V MHz pF 2003. 3. 27 Revision No : 3 1/3 KTC3072D/L COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.6 COLLECTOR CURRENT I C (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ta =2 5 C I C - VCE 3.4 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2.0 Ta=25 C 7mA 6mA 5mA 4mA 3mA 2mA I B =1mA 2.4 2.8 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE 8 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VCE =10V Ta=25 C I C - VCE(sat) 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 I C /IB =30 Ta=25 C BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) h FE - I C 700 600 500 400 300 200 100 0 0.01 0.03 0.1 0.3 1 3 10 VCE =2V Ta=25 C fT TRANSITION FREQUENCY f T (MHz) 400 IE VCE =6V Ta=25 C 800 DC CURRENT GAIN h FE 300 200 100 0 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) 2003. 3. 27 Revision No : 3 2/3 KTC3072D/L C ob - VCB OUTPUT CAPACITANCE C ob (pF) 100 80 60 40 20 0 COLLECTOR CURRENT I C (A) I E =0 f=1MHz Ta=25 C SAFE OPERATION AREA 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 I C MAX.(PULSED)* I C MAX. t= 1 t= s* 0m 1s * *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 3 5 10 30 50 100 0.3 1 3 10 30 100 COLLECTOR BASE VOLTAGE VCB (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 3 3/3 |
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